A parametric study of the behavior of 1 micron GaAs FET amplifiers
Abstract
The present paper is concerned with the use of computer-aided design (CAD) techniques in the study of the influence of gate width on the performance of a feedback amplifier using 1 micron GaAs FETs. Using modern CAD techniques, an array of feedback amplifiers is optimized around the models for 1 micron GaAs FETs, with gate widths ranging from 200 to 1,000 microns. The optimized feedback amplifier circuits can serve as a basis for numerous amplifier designs in both hybrid and monolithic microwave integrated circuit (MMIC) formats. The optimized inductors calculated by the software can be used directly in the design of an MMIC chip or converted to transmission line elements for hybrid designs.
- Publication:
-
Microwave Journal
- Pub Date:
- October 1985
- Bibcode:
- 1985MiJo...28R.155S
- Keywords:
-
- Amplifier Design;
- Computer Aided Design;
- Feedback Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Circuit Diagrams;
- Gates (Circuits);
- Integrated Circuits;
- Microwave Circuits;
- Power Gain;
- Electronics and Electrical Engineering