Accurate measurement of high-power GaAs FET terminating impedances improves device characterization
Abstract
The application of load-pulling, i.e., measurement of the load impedance in projected operational condition, to characterize the performance of high-power microwave FET devices is detailed. Load-pulling is employed when the signal strength is beyond those governed by standardized S-parameters. Device performance is then tracked in diverse load conditions for a given frequency. The load is changed until an optimum impedance emerges. The accuracy of the choice of impedance is tested with an error model. Wideband calibration standards are defined for microstrips and applied as comparison values with the constant power and efficiencies of two FETs with outputs in the 3.7-4.2 GHz interval. The results underscore the accuracy of the impedance selection technique.
- Publication:
-
Microwave Journal
- Pub Date:
- May 1985
- Bibcode:
- 1985MiJo...28..255K
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Impedance Measurement;
- Microwave Amplifiers;
- Power Amplifiers;
- Broadband;
- Calibrating;
- Electronic Equipment Tests;
- Frequency Response;
- Insertion Loss;
- Instrument Errors;
- Microstrip Transmission Lines;
- Electronics and Electrical Engineering