Microwave transistors for operation in oscillators
Abstract
The structural and design features of microwave bipolar Si transistors and GaAs FETs for operation in harmonic oscillators and power amplifiers are examined. The relationship between the power parameters and the equivalent-circuit parameters is defined, and the dependence of the transistor parameters on the electric operating regime is investigated. The operating characteristics of transistors in radio-electronic equipment are discussed, and recommendations on improving their operations are given with an examination of the main types of malfunctions.
- Publication:
-
Moscow Izdatel Radio Sviaz
- Pub Date:
- 1985
- Bibcode:
- 1985MIzRS....S....Z
- Keywords:
-
- Bipolar Transistors;
- Field Effect Transistors;
- Harmonic Oscillators;
- Microwave Equipment;
- Silicon Transistors;
- Structural Reliability;
- Equivalent Circuits;
- Gallium Arsenides;
- Parameter Identification;
- Power Amplifiers;
- Radio Electronics;
- Systems Engineering;
- Technology Utilization;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering