Analysis and design of electron- and ion-beam lithography systems
Abstract
The general design and the principle of operation of the probes and projection equipment used in electron- and ion-beam lithography are examined. Attention is also given to the fundamentals of the theory of electron optics and methods for calculating the aberration characteristics of electron-optic systems with axial symmetry and with small deviations from axial symmetry. Some results of calculations of aberration characteristics are presented, and methods for optimizing projection systems are discussed.
- Publication:
-
Moscow Izdatel Radio Sviaz
- Pub Date:
- 1985
- Bibcode:
- 1985MIzRS....Q....P
- Keywords:
-
- Electron Optics;
- Ion Beams;
- Lithography;
- Aberration;
- Electron Sources;
- Ion Sources;
- Lenses;
- Liquid Metals;
- Magnetic Fields;
- Optimization;
- Electronics and Electrical Engineering