Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
Abstract
Persistent photoconductivity due to the DX center in GaAs under a hydrostatic pressure of about 30 kbar has been observed for the first time. The characteristic temperature-dependent photoconductivity observed in GaAs under pressure is quite similar to that in AlGaAs alloy system. This indicates that the DX center in GaAs under hydrostatic pressure has also a large lattice relaxation owing to the AlGaAs-like conduction band structure.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1985
- DOI:
- 10.1143/JJAP.24.L893
- Bibcode:
- 1985JaJAP..24L.893T
- Keywords:
-
- Gallium Arsenides;
- Hydrostatic Pressure;
- Photoconductivity;
- Aluminum Gallium Arsenides;
- Lattice Parameters;
- N-Type Semiconductors;
- Pressure Effects;
- Solid-State Physics