AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
Abstract
AlGaAs/GaAs double heterostructure (DH) laser diodes (LD’s) have been fabricated on Si substrates using (GaP/GaAsP) strained layer super lattice (SLS) and (GaAsP/GaAs) SLS buffer layers grown entirely by MOCVD. The fabricated LD’s have the threshold current density of 27 KA/cm2 at 22°C and 8∼ 12 KA/cm2 at 77 K.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- August 1985
- DOI:
- Bibcode:
- 1985JaJAP..24L.666S
- Keywords:
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- Aluminum Gallium Arsenides;
- Fabrication;
- Gallium Arsenides;
- Semiconductor Diodes;
- Semiconductor Lasers;
- Superlattices;
- Heterojunction Devices;
- Laser Outputs;
- Silicon;
- Substrates;
- Threshold Currents;
- Vapor Deposition;
- Lasers and Masers