Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well Lasers
Abstract
The linewidth enhancement factor α in GaAs/AlGaAs multi-quantum-well (MQW) lasers has been determined from the spontaneous emission spectra below threshold. It is demonstrated that the value of α in MQW lasers is appreciably smaller than that in conventional double heterostructure (DH) lasers because of the enhanced carrier-density-derivative of the optical gain.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1985
- DOI:
- 10.1143/JJAP.24.L519
- Bibcode:
- 1985JaJAP..24L.519O
- Keywords:
-
- Aluminum Gallium Arsenides;
- Emission Spectra;
- Gallium Arsenide Lasers;
- Quantum Wells;
- Spectral Line Width;
- Carrier Density (Solid State);
- Optical Coupling;
- Lasers and Masers