LEC Growth of InP Single Crystals Using Ceramics AlN Crucible
Abstract
The liquid encapsulated Czochralski technique using a ceramics AlN crucible has been investigated for the growth of InP single crystals. High purity crystals, typically having a carrier concentration of 2.2× 1015 cm-3 and a Hall mobility of 30100 cm2/(V\cdots) at 77 K for the first-to-freeze portion, are grown without serious contamination of electrically active impurities from the crucible. Impurity analyses of the grown crystals and the B2O3 encapsulants are carried out. The results are compared with those for the crystal grown from a pBN crucible.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- January 1985
- DOI:
- 10.1143/JJAP.24.L69
- Bibcode:
- 1985JaJAP..24L..69K
- Keywords:
-
- Carrier Density (Solid State);
- Carrier Mobility;
- Czochralski Method;
- Encapsulating;
- Indium Phosphides;
- Single Crystals;
- Aluminum Nitrides;
- Ceramics;
- Crucibles;
- Electrical Properties;
- Melts (Crystal Growth);
- Solid-State Physics