Bias Voltage Dependence of the Detected Voltage in MOM Devices

W-Ni point contact MOM devices with stable electrical characteristics are fabricated by using a SiO2 thin film on a nickel post instead of NiO oxide. Two other devices, one made by growing a 10-15 A NiO layer in the air after polishing the Ni surface and the other made by thermally growing a 10-15 A NiO layer, are used to compare the newly developed device characteristics with those of conventional devices. The current-voltage of the fabricated MOM diodes are investigated in order to determine whether the detected voltage arises from nonlinear I-V characteristics. The results are presented in graphs and tables.