Optoelectronic components for multigigabit systems
Abstract
Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LEDs, lasers, p-i-n FETs, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to 10-20 Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity will drive technology to higher optoelectronic integration levels.
- Publication:
-
Journal of Lightwave Technology
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985JLwT....3.1170G
- Keywords:
-
- Digital Data;
- Electro-Optics;
- Integrated Circuits;
- Laser Applications;
- Microwave Transmission;
- Optical Communication;
- Aluminum Gallium Arsenides;
- Chemiluminescence;
- Field Effect Transistors;
- Heterojunctions;
- High Speed;
- Metal Oxide Semiconductors;
- Electronics and Electrical Engineering;
- LIGHTWAVE DEVICES;
- OPTOELECTRONICS;
- OPTICAL COMMUNICATIONS