The physics of ultrahigh-speed transistors

The speed and efficiency of digital data processing devices is largely determined by the speed of transistors and the degree of integration. Here, the physical principles underlying the operation of bipolar and field-effect transistors as well as hot-electron transistors are examined. In addition to the traditional silicon devices, attention is give to gallium arsenide and other III-V semiconductors and heterostructures based on them. The response characteristics of various types of transistors, both practically achieved and theoretically possible, are presented.