An extrinsic Si thermal-imaging array

A novel co-ordinate addressed structure for a slow photoconductor is described which requires only a simple contact pattern to make a large array. The principle has been applied to radiation-damaged doped p-Si, which has a spectral response matching the 3-4.2 μm atmospheric transmission band. "Staring" thermal imagery with temperature resolution better than 0.1 K has been demonstrated with real-time uniformity correction and display. It is predicted that this level of performance could be achieved in arrays comprising $∼10 ⁵ picture points