Heavy ion induced permanent damage in MNOS gate insulators
Abstract
Heavy-ion-induced permanent damage in MNOS gate insulators has been investigated using a Cf252 fission source. The electric field and ion LET thresholds for onset of the damage has been characterized. The results are consistent with a thermal runaway mechanism in the silicon nitride layer initiated by a single heavy ion and leading to a permanent high conductivity path through the dielectric layers.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985ITNS...32.4176P
- Keywords:
-
- Heavy Ions;
- Insulators;
- Ion Irradiation;
- Linear Energy Transfer (Let);
- Metal-Nitride-Oxide-Silicon;
- Radiation Damage;
- Californium Isotopes;
- Dielectrics;
- Fission Products;
- Gates (Circuits);
- Silicon Nitrides;
- Electronics and Electrical Engineering