Correlated proton and heavy ion upset measurements on IDT static RAMs

The present paper is concerned with the conduction of measurements of upset cross sections and linear energy transfer (LET) thresholds in the case of two 16 K CMOS/NMOS static RAMs. Both RAMs use bulk process parts, and radiation hardened epitaxial process parts (epi). According to a simple analysis, it appears that the hardening process used to produce the epi devices, which was implemented with total dose performance considerations and not for single event upset, has improved the resistance to proton induced single event upset in one case by a factor of around four compared with a factor of 10 for the other case.