Ion track shunt effects in multi-junction structures

Charge collection processes are discussed for heavy ion hits across multiple p-n junctions in bipolar transistor or CMOS structures. The concept of a resistive-like ion track shunt bridging two like conductivity regions is introduced and a first-order model developed for the charge transported along the ion track shunt. This model is shown to be consistent with charge collection measurements on multi-junction CMOS-like structures. It is found that the charge collection at a given p-n junction is influenced and can even be changed in sign by voltages present at a second p-n junction when the ion track penetrates both junctions. This has important consequences for the design of radiation hard integrated circuits and such ion track shunt effects become more important as device dimensions are scaled to smaller values.