GaAs MMIC technology radiation effects
Abstract
A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MMICs. Results are compared with predictions of radiation effects models.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985ITNS...32.4040A
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Radiation Effects;
- Electron Irradiation;
- Fabrication;
- Neutron Irradiation;
- Transient Response;
- X Ray Analysis;
- Electronics and Electrical Engineering