Hardening of commercial CMOS PROMs with polysilicon fusible links
Abstract
The method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- 10.1109/TNS.1985.4334064
- Bibcode:
- 1985ITNS...32.4036N
- Keywords:
-
- Cmos;
- Polycrystals;
- Radiation Effects;
- Radiation Hardening;
- Read-Only Memory Devices;
- Silicon;
- Access Time;
- Fusion (Melting);
- Metal Oxide Semiconductors;
- Radiation Dosage;
- Threshold Voltage;
- Electronics and Electrical Engineering