Analysis of transient radiation upset in a 2K SRAM
Abstract
Experimental characterization of the effects of power supply interconnect resistance on the transient radiation induced upset level of a 2K SRAM and correlations with rail span collapse simulations are presented. The results show that the dose-rate upset threshold increases if columns of RAM cells are isolated from the V(ss) supply grid. The magnitude of this increase is predicted well by computer simulations.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- 10.1109/TNS.1985.4334062
- Bibcode:
- 1985ITNS...32.4026M
- Keywords:
-
- Cmos;
- Electrical Faults;
- Radiation Effects;
- Random Access Memory;
- Single Event Upsets;
- Computerized Simulation;
- Electric Power Supplies;
- Pulsed Radiation;
- Radiation Dosage;
- Transient Response;
- Electronics and Electrical Engineering