Radiation effects in InP JETs

Transient and total dose radiation effects were studied in InP JETs under bias conditions. The transient responses in drain current, ID, and output power, PO, at 4.5 GHz following 50 ns pulses of 40 MeV electrons were small up to 1.7 x 10 to the 11th rad(InP)/s. The long term transient response is postulated to result from substrate trapping of radiation induced carriers and consequent backgating. No measureable drift in ID was observed following exposure to 40 MeV pulsed electrons, 1 MeV electrons from a Van de Graaff, or gamma rays from a Co-60 source. No significant degradation was found in ID or PO up to a total dose of 8 x 10 to the 8th rad (InP). The hardness level for 1 MeV gamma iradiation is greater than 10 to the 8th rad, exceeding that of GaAs by more than an order of magnitude. Total dose degradation is the result of carrier removal.