Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors
Abstract
The radiation-induced positive charges trapped in an n-type MDS capacitor were observed to decrease with the number of C-V measurements. The positive gate bias applied on the capacitor was found to cause the decrease in the trapped charges. Its proposed mechanism was a recombination of the trapped positive charges with electrons injected from the Si substrate into the SiO2 layer due to the bias.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1985
- DOI:
- 10.1109/TNS.1985.4334042
- Bibcode:
- 1985ITNS...32.3911S
- Keywords:
-
- Annealing;
- Capacitors;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Radiation Effects;
- Bias;
- Capacitance-Voltage Characteristics;
- Energy Bands;
- Silicon;
- Trapping;
- Solid-State Physics