Power increase of pulsed millimeter-wave IMPATT diodes
Abstract
The fabrication and encapsulation of single-drift pulsed IMPATT diodes for 73 GHz is described. The transforming properties of the parasitic inductance and capacitance demonstrate the strong influence of diode-mounting technique. The used reduced-height waveguide resonator is described theoretically, giving an indication of optimum matching between resonator and transformed diode impedance. The diodes deliver more than 10-W output power at 73 GHz with 5-percent efficiency, if they are matched to the resonator by proper parasitics.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- November 1985
- DOI:
- Bibcode:
- 1985ITMTT..33.1228P
- Keywords:
-
- Avalanche Diodes;
- Electronic Packaging;
- Impedance Matching;
- Microwave Equipment;
- Millimeter Waves;
- Waveguides;
- Capacitance;
- Coaxial Cables;
- Electromagnetic Pulses;
- Encapsulating;
- Fabrication;
- Inductance;
- Power Efficiency;
- Resonators;
- Electronics and Electrical Engineering