Ka-band FET oscillator
Abstract
The design and performance of GaAs FET oscillators operating near 36 GHz are presented. The oscillators used readily available GaAs FET's and were built in a microstrip circuit configuration. An output power of about +8 dBm was obtained with two devices in a single oscillator.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- August 1985
- DOI:
- 10.1109/TMTT.1985.1133066
- Bibcode:
- 1985ITMTT..33..731T
- Keywords:
-
- Equivalent Circuits;
- Extremely High Frequencies;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Oscillators;
- Transistor Circuits;
- Microelectronics;
- Microstrip Devices;
- Network Analysis;
- Oscillographs;
- Electronics and Electrical Engineering