Analysis of noise upconversion in microwave FET oscillators
Abstract
An analysis of the upconversion of low-frequency noise in microwave FET oscillators is presented. In its general form, the method is applied to virtually all kinds of FET oscillators. From a simplified version, closed-form expressions for amplitude and phase noise are derived, followed by a discussion of the main consequences concerning the upconversion process. On the basis of the theory that is presented, the noise performance of practical FET oscillators is calculated and optimized with respect to device selection, bias conditions, circuit topology, and element values. The capabilities of the method are demonstrated with an example.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1985
- DOI:
- 10.1109/TMTT.1985.1132986
- Bibcode:
- 1985ITMTT..33..233S
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Oscillators;
- Noise Prediction;
- Noise Spectra;
- Design Analysis;
- Low Noise;
- Power Amplifiers;
- Up-Converters;
- Electronics and Electrical Engineering