Field analysis of a millimeter-wave GaAs double-drift IMPATT diode in the traveling-wave mode
Abstract
A complete set of differential equations governing both wave propagation and avalanche multiplication is solved with boundary conditions, including finite conductivities of metal contacts. Results are presented for a GaAs double-drift traveling-wave IMPATT diode. It is shown that the propagation is slow at high frequencies and that as frequencies decrease and approach the avalanche resonance, the gain increases and the phase velocity becomes faster. The device performance is also investigated and it is shown that there is an optimum set of semiconductor layer thicknesses.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1985
- DOI:
- 10.1109/TMTT.1985.1132983
- Bibcode:
- 1985ITMTT..33..216F
- Keywords:
-
- Avalanche Diodes;
- Electromagnetic Fields;
- Gallium Arsenides;
- Microwave Oscillators;
- Millimeter Waves;
- Traveling Wave Amplifiers;
- Electron Avalanche;
- Frequency Response;
- Phase Velocity;
- Power Gain;
- Wave Equations;
- Electronics and Electrical Engineering