Theory of electron and hole impact ionization in quantum well and staircase superlattice avalanche photodiode structures
Abstract
An ensemble many particle Monte Carlo simulation of both electron and hole impact ionization superlattice avalanche photodiodes is presented. The effects of the well depth, width, and applied electric field are analyzed for both the electrons and holes in the quantum well structure. The results are consistent with the current theory of impact ionization first proposed by Shichijo and Hess (1981). It is found that the ratio of the electron to hole impact ionization rates is roughly two orders of magnitude in the staircase APD while alpha/beta is enhanced by one order of magnitude in the quantum well device.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1985
- DOI:
- 10.1109/T-ED.1985.22258
- Bibcode:
- 1985ITED...32.2197B
- Keywords:
-
- Avalanche Diodes;
- Electron Impact;
- Holes (Electron Deficiencies);
- Ion Production Rates;
- Photodiodes;
- Quantum Wells;
- Carrier Transport (Solid State);
- Electron Energy;
- Energy Bands;
- Energy Distribution;
- Monte Carlo Method;
- Superlattices;
- Electronics and Electrical Engineering