Threedimensional device simulator CADDETH with highly convergent matrix solution algorithms
Abstract
A practical threedimensional device simulator CADDETH (Computer Aided Device DEsign in THree dimensions) has been developed. Matrix solution methods appropriate to threedimensional analyses have been devised. A vectorization ratio of 97 percent has been attained through efficient use of S810 super computer with vectorized coding, resulting in a computation speed 16 times greater than can be obtained with S810 in scalar mode computation. Full avalanche breakdown of MOSFET's can be readily simulated with good convergence and good agreement with experimental results.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 October 1985
 DOI:
 10.1109/TED.1985.22236
 Bibcode:
 1985ITED...32.2038T
 Keywords:

 Computer Aided Design;
 Computerized Simulation;
 Electron Avalanche;
 Field Effect Transistors;
 Matrix Theory;
 Very Large Scale Integration;
 Algorithms;
 Continuity Equation;
 Finite Difference Theory;
 Poisson Equation;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering