Semiconductor device simulation at NTT
Abstract
The current status of semiconductor-device simulation at NTT is examined, with emphasis on calculated results using various kinds of simulators. The conventional macroscopic simulators FEDAS, TRANAL, and HESPER in two and/or three dimensions have been developed; they have been successfully applied to a variety of devices, including FETs and bipolar transistors in Si, GaAs MESFETs, and heterostructure transistors. In addition, particle simulators using a Monte Carlo method have been developed; APSIS has been applied to submicron GaAs and Si MESFETs. Macroscopic combined simulators, such as gate level and process/device simulators, have also been introduced.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1985
- DOI:
- 10.1109/T-ED.1985.22233
- Bibcode:
- 1985ITED...32.2008Y
- Keywords:
-
- Digital Simulation;
- Monte Carlo Method;
- Semiconductor Devices;
- Bipolar Transistors;
- Electron Gas;
- Field Effect Transistors;
- Gallium Arsenides;
- Iterative Solution;
- N-P-N Junctions;
- Silicon Transistors;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering