Characteristics and readout of an InSb CID two-dimensional scanning TDI array
Abstract
A 16 x 64 InSb CID two-dimensional array using a concentric gate structure and planar processing is described that is designed for scanning TDI applications. An in-depth analysis of the physical mechanisms of the charge-injection device and a simplified dual-gate CID readout modeling based on a piecewise linear approximation are discussed. Excellent array performance was measured using the sequential-row-inject readout scheme in its simplest form. Good dual-gate coupling and charge transfer demonstrate the feasibility of the ideal mode operation. The empirical results are also in agreement with the calculation predicted by the readout modeling and analysis using the material and device parameters.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1985
- DOI:
- Bibcode:
- 1985ITED...32.1599W
- Keywords:
-
- Arrays;
- Charge Injection Devices;
- Indium Antimonides;
- Readout;
- Scanning;
- Time Lag;
- Capacitance-Voltage Characteristics;
- Charge Transfer;
- Equivalent Circuits;
- Fabrication;
- Gates (Circuits);
- Waveforms;
- Instrumentation and Photography