160 x 244 element PtSi Schottky-barrier IR-CCD image sensor
Abstract
A 160 x 244 element IR-CCD image sensor was developed with PtSi Schottky-barrier detectors (SBDs) for thermal imaging in the 3.0-5.0-micron IR band. This imager has 80 micron x 40 micron pixels, a fill factor of 39 percent, and a chip size of 584 mil x 464 mil. It produces excellent quality thermal imaging with noise-equivalent temperature of less than 0.1 K for operation at 30 frames/s with standard-TV-interlace f/2.3 optics, and one-point offset-type uniformity corrector. The design, construction, and performance of a 160 x 244 element IR-CCD imager, and the characteristics of the PtSi Schottky-barrier detector elements, are described.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1985
- DOI:
- Bibcode:
- 1985ITED...32.1564K
- Keywords:
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- Charge Coupled Devices;
- Imaging Techniques;
- Infrared Imagery;
- Platinum Compounds;
- Schottky Diodes;
- Silicides;
- Electric Current;
- Fabrication;
- Quantum Efficiency;
- Spectral Sensitivity;
- Tradeoffs;
- Instrumentation and Photography