A SPICE modeling technique for GaAs MESFET IC's
Abstract
A vertically integrated device modeling technique for GaAs ICs is presented for use in circuit simulation. Most of the SPICE2 capability can be utilized for modeling the gate transit time and parasitic effects. A computer program has also been developed to extract model parameters from the measured device data.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1985
- DOI:
- 10.1109/T-ED.1985.22060
- Bibcode:
- 1985ITED...32..996H
- Keywords:
-
- Computerized Simulation;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Network Analysis;
- Transistor Circuits;
- Equivalent Circuits;
- Gates (Circuits);
- Transit Time;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering