Investigation of In(0.53)Ga(0.47)As for high-frequency microwave power FET's
Abstract
Submicrometer In(0.53)Ga(0.47)As junction field-effect transistors (JFETs) were fabricated using a chemical etching technique. In spite of the well-known low bulk breakdown fields of InGaAs, the source-drain breakdown voltages of the FETs were close to 20 V under pinchoff conditions, indicating a potentially high power-handling capability. At 11 GHz, a 250-micron-wide FET showed a linear gain of 5.2 dB and 17.2-dB m (53 mW) output power at 1-dB compression point, with a power-added efficiency of 14 percent. Problems of an unexpectedly low electron mobility in the channel, annealing of implanted Be, and oscillations in the drain current-voltage characteristic are discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1985
- DOI:
- 10.1109/T-ED.1985.22055
- Bibcode:
- 1985ITED...32..972C
- Keywords:
-
- Gallium Arsenides;
- Indium Arsenides;
- Jfet;
- Microwave Equipment;
- Millimeter Waves;
- Power Gain;
- Annealing;
- Electrical Faults;
- Electron Mobility;
- Gunn Effect;
- Ion Implantation;
- Microelectronics;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering