Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors
Abstract
A model for the temperature dependence of the threshold voltage of modulation-doped FETs caused by traps in doped AlGaAs is presented. The model takes into account the charge distribution in the depletion region determined by the temperature and time-dependent occupation of traps. The theory shows excellent agreement with experiment in the temperature range 77 to 400 K.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1985
- DOI:
- Bibcode:
- 1985ITED...32..865S
- Keywords:
-
- Aluminum Gallium Arsenides;
- Doped Crystals;
- Electric Potential;
- Field Effect Transistors;
- High Electron Mobility Transistors;
- Temperature Dependence;
- Threshold Voltage;
- Band Structure Of Solids;
- Charge Distribution;
- Fermi Surfaces;
- Heterojunction Devices;
- Space Charge;
- Trapping;
- Electronics and Electrical Engineering