Performance limits of CMOS ULSI

An analytic metal oxide semiconductor technology model has been developed to calculate accurately the threshold voltage at submicrometer dimensions and to predict the scaling limits of digital CMOS circuits. Salient results show that for 2-V power-supply voltages, channel lengths as small as 0.14 microns for static E/E CMOS, 0.20 microns for static E/D CMOS, 0.29 microns for dynamic transmission-gate CMOS, and 0.45 microns for static E/D NMOS circuits are possible. At submicrometer dimensions, CMOS offers as much as a 3:1 scaling advantage in minimum channel length which translates to a 5:1 improvement in gate delay when compared to NMOS. Thus, CMOS is projected as the dominant ULSI technology, not only due to its well known large operating margins, low static-power dissipation and design flexibility, but also due to markedly superior speed.