Characteristics of MOSFET prepared on Si/MgO-Al(2)O3/SiO2/Si structure
Abstract
The novel Si-on-insulator (SOI) wafer with epitaxial-Si/epitaxial MgO-Al2O3/SiO2/(100) Si structure presented yields low parasitic capacitance and high voltage tolerance between the top Si layer and the bulk Si, through the use of a thick SiO2 film; it is also free from strain in the top Si layer. The static characteristics of an n-channel MOSFET prepared with the present SOI wafers exhibited the highest value of channel electron mobility for the case of a 3-micron thick top Si layer. The tailing factor and p-n junction leakage current obtained for the 3-micron Si layer were nearly the same as those for SOS FETs.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1985
- DOI:
- 10.1109/T-ED.1985.21938
- Bibcode:
- 1985ITED...32..253H
- Keywords:
-
- Field Effect Transistors;
- Silicon Transistors;
- Sis (Semiconductors);
- Thick Films;
- Volt-Ampere Characteristics;
- Aluminum Oxides;
- Electron Mobility;
- Epitaxy;
- Magnesium Oxides;
- N-Type Semiconductors;
- Raman Spectroscopy;
- Silicon Oxides;
- Electronics and Electrical Engineering