Gallium arsenide traveling-wave field-effect transistors
Abstract
The design, modeling, and fabrication of a GaAs traveling-wave field-effect transistor (TWF) is reported. The TWF described is a device with a single continuous 1-micron-long gate and a total width of 3 mm which shows flat band gain from 1 to 10 GHz with the potential of much wider band performance (1-40 GHz) and high gains. An advanced theoretical model is presented which performs a full coupled transmission line model analysis for three lines (source gate and drain) using ab-initio calculations of interelectrode capacitance and inductance matrices. Good agreement is demonstrated between theory and experiment for frequency gain response measurements using balanced feed circuits.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- January 1985
- DOI:
- 10.1109/T-ED.1985.21910
- Bibcode:
- 1985ITED...32...61H
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Performance Prediction;
- Traveling Wave Amplifiers;
- Bandwidth;
- Eigenvalues;
- Eigenvectors;
- Fabrication;
- Frequency Response;
- Matrices (Mathematics);
- Electronics and Electrical Engineering