Operation of a single-phase CCD on GaAs at 560 MHz
Abstract
A 32 bit, two/single phase CCD has been fabricated on GaAs using a simple four-stage fabrication process. Its operation is described at frequencies of up to 560 MHz. The charge transfer efficiency was estimated to be in excess of 0.998 per transfer below 100 MHz.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- February 1985
- Bibcode:
- 1985IPSSE.132...34H
- Keywords:
-
- Charge Coupled Devices;
- Gallium Arsenides;
- Schottky Diodes;
- Charge Transfer;
- Digital Systems;
- Fabrication;
- Performance Tests;
- Electronics and Electrical Engineering