Model for semiconductor laser structures incorporating longitudinal and transverse variations
Abstract
A description is given of a computer model for the analysis of semiconductor lasers in which longitudinal variations in such devices are taken into account. The construction of the model ensures that a detailed description of the transverse variations in the device is also maintained, and, furthermore, that a variety of cross-sectional geometries may be examined. Numerical results are presented to illustrate longitudinal variations occurring in the device due to asymmetries in facet reflectivities.
- Publication:
-
IEE Proceedings J: Optoelectronics
- Pub Date:
- February 1985
- Bibcode:
- 1985IPOpt.132...52S
- Keywords:
-
- Computerized Simulation;
- Heterojunction Devices;
- Injection Lasers;
- Laser Outputs;
- Longitudinal Waves;
- Semiconductor Lasers;
- Laser Modes;
- Power Gain;
- Radiant Flux Density;
- Reflectance;
- Transverse Waves;
- Traveling Wave Amplifiers;
- Waveguide Lasers;
- Lasers and Masers