A new integrable composite circuit with improved FET-like characteristics

Five active devices and three passive resistors are integrated in a composite circuit which exhibits FET-like characteristics with significant improvements in thermal stability and transfer curve linearity over a wide range of input bipolar voltage. The circuit's input resistance is not only equal to that of an FET, but remains high even for positive input voltage. It may be mass produced as a three-terminal device, with terminals designated as gate, drain, and source.