Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption 'grading' and multiplication regions
Abstract
The frequency response of InP/InGaAsP/InGaAs photodiodes with separate absorption, 'grading', and multiplication regions (SAGM-APD's) was measured for a wide range (M sub 0 = 2-35) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gain-bandwidth limit.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- November 1985
- DOI:
- 10.1109/JQE.1985.1072588
- Bibcode:
- 1985IJQE...21.1743C
- Keywords:
-
- Avalanche Diodes;
- Carrier Transport (Solid State);
- Frequency Response;
- Gallium Arsenides;
- Heterojunction Devices;
- Indium Phosphides;
- Photodiodes;
- Bandwidth;
- Hole Distribution (Electronics);
- Power Gain;
- Rc Circuits;
- Transit Time;
- Electronics and Electrical Engineering