Bistability by induced waveguiding in coupled semiconductor lasers
Abstract
Recently, McInerney, Reekie, and Bradley (1985) observed bistability in twin diode GaAs/GaAlAs injection lasers in an external cavity when both diodes were above threshold. It is shown that this bistability may be explained by a form of self-focusing which is produced by induced waveguiding in the wide stripe lasers. A detailed analysis is performed on a standard model of these diodes in an external cavity. Very good agreement is found between theory and experiment.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1985
- DOI:
- 10.1109/JQE.1985.1072829
- Bibcode:
- 1985IJQE...21.1505H
- Keywords:
-
- Laser Cavities;
- Optical Bistability;
- Optical Coupling;
- Semiconductor Lasers;
- Waveguides;
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Mathematical Models;
- Lasers and Masers