A fast algorithm for DC design of millimeter wave impatts

Computation of steady state I-V characteristics combined with the expression of dc to rf conversion efficiency in terms of voltages across avalanche and drift regions can be used for profile optimisation of mm-wave Impatts. This provides a faster design when compared to using comprehensive simulation programmes for the same purpose. The algorithm developed for faster computation of dc I-V characteristics of Impatts is described here with some specific example where the results of the present computation are compared with those obtained by other method. A good agreement, within ±0.2%, has been observed. Since the method involved here does not require large computer memory, a desk top computer with modest capabilities is good enough for designing the profiles for Impatts efficiently. The method is general in nature and can easily be adopted for device designs for lower frequencies as well.