Ka/Q band GaAs IMPATT amplifier technology
Abstract
GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18–22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passive circuit characterization with an automatic network analyzer. In the second step, a computer is used to generate diode device lines. The third step is load line synthesis for predictable operation. The resulting performance is described. 2 W over a 2GHz bandwidth was achieved simultaneously with a minimum gain of 12 dB.
- Publication:
-
International Journal of Infrared and Millimeter Waves
- Pub Date:
- February 1985
- DOI:
- Bibcode:
- 1985IJIMW...6...79J
- Keywords:
-
- Amplifier Design;
- Avalanche Diodes;
- Extremely High Frequencies;
- Gallium Arsenides;
- Microwave Amplifiers;
- Microwave Circuits;
- Bandwidth;
- Bias;
- Computerized Simulation;
- Electrical Impedance;
- Energy Conversion Efficiency;
- Impedance Matching;
- Negative Resistance Devices;
- Thermal Resistance;
- Waveguides;
- Electronics and Electrical Engineering;
- GaAs;
- Frequency Band;
- Network Analyzer;
- Closed Form;
- Circuit Design