Realization of n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
Abstract
Self-aligned gate by ion implantation n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulated-gate field-effect transistors (HIGFET's) have been fabricated on the same planar wafer surface for the first time. Enhancement-mode n-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 218 mS/mm at room temperature and 385 mS/mm at 77 K. Enhancement-mode p-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 28 mS/mm at room temperature and 59 mS/mm at 77 K. These are the highest transconductance values ever reported on a p-channel FET device.
- Publication:
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IEEE Electron Device Letters
- Pub Date:
- December 1985
- DOI:
- Bibcode:
- 1985IEDL....6..645C
- Keywords:
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- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Heterojunctions;
- High Electron Mobility Transistors;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Electrical Properties;
- Large Scale Integration;
- Molecular Beam Epitaxy;
- Very Large Scale Integration;
- Electronics and Electrical Engineering