A In0.53Ga0.47As-In0.52A10.48As single quantum well field-effect transistor
Abstract
This letter reports the material characteristics and device performance of a In0.53Ga0.47As-In0.52A10.48As single quantum well (SQW) field-effect transistor grown by molecular beam epitaxy on (001) InP:Fe substrates. An inverted modulation-doped single quantum well forms the channel region, and the gate barrier is formed by undoped semi-insulating InAlAs. High mobility values are measured with quantum wells as small as 100 A. A dc transconductance of 130 mS/mm was measured at room temperature in a 1.8-micron recessed-gate transistor.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1985
- DOI:
- 10.1109/EDL.1985.26260
- Bibcode:
- 1985IEDL....6..642S
- Keywords:
-
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Aluminum Arsenides;
- Electron Mobility;
- Photoluminescence;
- Temperature Dependence;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering