Determination of 2-D electron-gas carrier mobility in short gate-length MODFET's by direct elimination of parasitic resistance effects
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1985
- DOI:
- 10.1109/EDL.1985.26242
- Bibcode:
- 1985IEDL....6..594L
- Keywords:
-
- Capacitance-Voltage Characteristics;
- Carrier Mobility;
- Electron Gas;
- Field Effect Transistors;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Aluminum Gallium Arsenides;
- Gates (Circuits);
- Heterojunctions;
- Schottky Diodes;
- Electronics and Electrical Engineering