Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method
Abstract
A method for measuring the electron mobility, velocity, and sheet carrier concentration in modulation-doped structures as functions of electric field through the use of the geometrical magnetoresistance effect is described. Because the geometry of the structures is identical to that of ungated FETs, these measurements are well suited for studying the electron velocity in MODFETs. The mobility quickly decreases from its low field value with increasing electric field and significant electron injection from the contacts is observed. The electron velocity increases to about 1.4 x 10 to the 7th cm/s at 3000 V/cm at 77 K, before domain formation prevents accurate measurements at higher fields.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1985
- DOI:
- 10.1109/EDL.1985.26222
- Bibcode:
- 1985IEDL....6..539M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electron Mobility;
- Field Effect Transistors;
- Magnetoresistivity;
- P-N Junctions;
- Velocity Measurement;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering