Scaled performance for submicron GaAs MESFET's
Abstract
Scaling schemes for GaAs MESFETs below the submicron gate length are proposed. The corresponding switching times are calculated accurately down to 0.25-micron gate length devices using an ensemble Monte Carlo simulation program. It is demonstrated that the proposed scaled devices offer ultrashort switching time due to the nonstationary carrier transport effects.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1985
- DOI:
- 10.1109/EDL.1985.26221
- Bibcode:
- 1985IEDL....6..536Y
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Monte Carlo Method;
- Schottky Diodes;
- Switching Circuits;
- Particle Collisions;
- Pauli Exclusion Principle;
- Electronics and Electrical Engineering