Noise behavior of 1-micron gate-length modulation-doped FET's from 10 to the -2nd to 10 to the 8th Hz
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1985
- DOI:
- 10.1109/EDL.1985.26190
- Bibcode:
- 1985IEDL....6..453L
- Keywords:
-
- Field Effect Transistors;
- Gates (Circuits);
- Low Noise;
- Noise Generators;
- Noise Spectra;
- Thermal Noise;
- Additives;
- Aluminum Gallium Arsenides;
- Fabrication;
- Frequency Response;
- Gallium Arsenides;
- Electronics and Electrical Engineering