Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- August 1985
- DOI:
- 10.1109/EDL.1985.26180
- Bibcode:
- 1985IEDL....6..431L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Electrical Measurement;
- Gallium Arsenides;
- Heterojunction Devices;
- Spike Potentials;
- Band Structure Of Solids;
- N-P-N Junctions;
- Particle Diffusion;
- Thermionic Emission;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering