Trapezoidal-groove Schottky-gate vertical-channel GaAs FET (GaAs static induction transistor)
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1985
- DOI:
- 10.1109/EDL.1985.26133
- Bibcode:
- 1985IEDL....6..304C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electrical Resistance;
- Epitaxy;
- Etching;
- Hysteresis;
- N-Type Semiconductors;
- Substrates;
- Electronics and Electrical Engineering